HGP059N12S

HGB059N12S , HGP059N12S P-1 Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control Part Number HGB059N12S HGP059N12S Package Marking TO-263 GB059N12S TO-220 GP059N12S 120V N-Ch Power MOSFET VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited) 120 4.4 4.7 160 120 V mΩ mΩ A A TO-263 TO-220 Drain Pin2 Gate Pin 1 Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=...