100V N-Ch Power MOSFET
HGB037N10S , HGP037N10S
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche...
Description
HGB037N10S , HGP037N10S
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
HGK037N10S
P-1
100V N-Ch Power MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-247 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited)
100 2.8 3 3.1 190 120
V mΩ mΩ mΩ A A
TO-263
TO-220
Drain Pin2
Gate Pin 1
Part Number HGB037N10S HGK037N10S HGP037N10S
Package Marking TO-263 GB037N10S TO-263 GK037N10S TO-220 GP037N10S
TO-247
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and...
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