PE29101

PE29101 Document Category: Product Specification UltraCMOS® High-speed FET Driver, 40 MHz Features High- and low-side FET drivers Dead-time control Fast propagation delay, 11 ns Internal gate overvoltage management E Sub-nanosecond rise and fall time 2A/4A peak source/sink current Package – flip chip Applications IF DC–DC conversions AC–DC conversions Wireless power L LiDAR Figure 1 PE29101 Functional Diagram VDD Sync Boot Switch IN EN RDHL RDLH UVLO Dead Time Controller Logic Level Shifter Level Shifter Output Driver Output Driver GND LSO VDDSYNC HSB HSGPU HSGPD HSS LSB LSGPU LSGPD LSS Product Description F The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds O result in smaller peripheral components and enable new applications such as wireless power charging. The PE29101 operates from 4V to 6.5V and can support a high side floating supply voltage of 80V. An optional internal synchronous bootstrap circuit limits overcharging of the bootstrap capacitor during reverse body diode conduction, preventing the GaN FETs from exceeding their maximum gate-to-source voltage rating. The PE29101 also features a dead-time controller that allows timing of the LS and HS gates to eliminat...