HTS110A03

HTS110A03 P-1 Feature ◇ High Speed Power Switching, logic level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control Part Number HTS110A03 Package Marking SOIC-8 TS110A03 30V Dual N-Channel Power MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID SOIC-8 D1 D2 D2 D1 30 9.5 14.5 12 V mΩ mΩ A D1 G1 G1 S2 G2 S1 D2 G2 S1 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TA=25℃ TA=100℃ L=0.1mH, TC=25℃ TA=25℃ - S2 Value 12 8.5 30 ±20 48 7.2 2 -55 to150 Unit A V V A mJ W ℃ Absolute Max...