HGP290N10SL

HGB290N10SL , HGP290N10SL P-1 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial TO-263 100V N-Ch Power MOSFET VDS RDS(on),typ RDS(on),typ TO-263 VGS=10V VGS=4.5V RDS(on),typ RDS(on),typ TO-220 VGS=10V VGS=4.5V ID (Sillicon Limited) 100 22.7 27.7 23.0 28 31 V mΩ mΩ mΩ mΩ A TO-220 Drain Pin2 Gate Pin 1 Part Number HGB290N10SL HGP290N10SL Package Marking TO-263 GB290N10SL TO-220 GP290N10SL Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS ...