30V N-Ch Power MOSFET
HTS130N04
Feature ◇ High Speed Power Switching, logic level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche ...
Description
HTS130N04
Feature ◇ High Speed Power Switching, logic level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
Part Number HTS130N04
Package Marking SOIC-8 TS130N04
P-1
30V N-Ch Power MOSFET
VDS RDS(on),typ RDS(on),typ ID
VGS=10V VGS=4.5V
40 9.6 14.5 12
V mΩ mΩ A
SOIC-8
Drain Pin2 Gate Pin 1
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM PD TJ, Tstg
TA=25℃ TA=70℃ TA=25℃ -
Value 12 10 40 ±20 48 2.5
-55 to 150
Unit
A
V V A W ℃
Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Case Thermal Resistance Junctio...
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