Document
HGB042N10A , HGP042N10A
P-1
Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application
◇ DC-DC Conversion
◇ Hard Switching and High Speed Circuit
◇ Power Tools ◇ UPS
TO-263
◇ SSR
100V N-Ch Power MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-220
ID (Sillicon Limited)
100 V 3.4 mΩ 3.7 mΩ 167 A
TO-220
Drain Gate
Part Number HGB042N10A HGP042N10A
Package Marking TO-263 GB042N10A TO-220 GP042N10A
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ L=0.1mH, TC=25℃ TC=25℃ -
Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ca.