HGP042N10A

HGB042N10A , HGP042N10A P-1 Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ DC-DC Conversion ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS TO-263 ◇ SSR 100V N-Ch Power MOSFET VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) 100 V 3.4 mΩ 3.7 mΩ 167 A TO-220 Drain Gate Part Number HGB042N10A HGP042N10A Package Marking TO-263 GB042N10A TO-220 GP042N10A Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.1mH, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ca...