HTS500B03

HTS500B03 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial P-1 30V Dual P-Ch Power MOSFET VDS RDS(on),typ VGS=-10V RDS(on),typ VGS=-5V ID (Sillicon Limited) SOIC-8 -30 40 65 -5 D1 D1 D2 D2 V mΩ mΩ A S1 G1 S2 G2 Part Number HTS500B03 Package Marking SOIC-8 TS500B03 D1 G1 D2 G2 S1 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.1mH, TC=25℃ TA=25℃ - S2 Value -5 -4 -30 ±20 -20 3.20 2.0 -55 to150 Unit A V V A mJ W ℃ Absolute Maximum Ratings Parameter Thermal Resistance Junction-Am...