SJTW20N60A

SJTW20N60A Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.17Ω ID 20A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTW20N60A TO-3P BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTW20N60A VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 600 20 60 Power Dissipation PD Derating Factor above 25℃ 208 1.67 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ±30 500 EAR Avalanche Energy ,Repetitive (NOTE *2) 1 IAR Avalanche Current (NOTE *2) TL Maximum Temperature for Soldering 20 300 Operating Junction and Storage TJ and TSTG Temperature Range (NOTE *1) 150，-55 to150 Units V A A W W/℃ V mJ mJ A ℃ Thermal Resistance Symbol Parameter RθJC R...