SJTP20N60A

SJTP20N60A N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.17Ω ID 20A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTP20N60A TO-220 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTP20N60A VDSS Drain-to-Source Voltage 600 ID Continuous Drain Current 20 IDM Pulsed Drain Current, VGS@10V 60 Power Dissipation PD Derating Factor above 25℃ 208 1.6 VGS Gate-to-Source Voltage ±30 EAS Single Pulse Avalanche Energy 500 EAR Avalanche Energy ,Repetitive 1 IAR Avalanche Current 20 TL Maximum Temperature for Soldering 300 Operating Junction and Storage TJ and TSTG Temperature Range -55 to150 Units V A A W W/℃ V mJ mJ A ℃ Thermal Resistance Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient ...