SVF2N60RD

Silan Microelectronics SVF2N60RD/M/MJ_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH: TO-220FJH; F:TO-220F Version Nominal current, using 1 or 2 digits. Example: 4 denotes 4A N denotes N channel Nominal voltage, using 2 digits. Example: 60 denotes 600V ORDERING INFORMATION Part No. SVF2N60RDTR SVF2N60RM SVF2N60RMJ Package TO-252-2L TO-251D-3L TO-251J-3L Marking 2N60RD 2N60RM 2N60RMJ Hazardous Substance Control Halogen free Halogen free Halogen free Packing Tape&Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 9 Silan Microelectronics SVF2N60RD/M/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics D...