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TSM2302CX Dataheets PDF



Part Number TSM2302CX
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description N-Channel Power MOSFET
Datasheet TSM2302CX DatasheetTSM2302CX Datasheet (PDF)

TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Load switch ● Backlights KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 4.5V VGS = 2.5V Qg 20 65 95 7.8 V mΩ nC SOT-23 Note: MSL 3 (Moisture Sensitivity Level) .

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TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Load switch ● Backlights KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 4.5V VGS = 2.5V Qg 20 65 95 7.8 V mΩ nC SOT-23 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Total Power Dissipation Total Power Dissipation TC = 25°C TA = 25°C TC = 25°C TC = 125°C TA = 25°C TA = 125°C VGS ID IDM PD PD ±8 3.9 3.2 15.6 1.5 0.3 1 0.2 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A W W °C THERMAL PERFOR.


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