N-Channel Power MOSFET
TSM025NB04LCR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 161A, 2.5mΩ
FEATURES
● Low RDS(ON) to minimize conducti...
Description
TSM025NB04LCR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 161A, 2.5mΩ
FEATURES
● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification
PDFN56
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V VGS = 4.5V
Qg
40 2.5 3.2 57
V mΩ nC
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 1)
TC = 25°C TA = 25°C
VDS VGS
ID
40 ±20 161 24
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche E...
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