TSM120N06LCP

TSM120N06LCP Taiwan Semiconductor N-Channel Power MOSFET 60V, 70A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.5V Qg 60 12 15 18 V mΩ nC APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● Secondary Synchronous Rectification TO-252(DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C VDS VGS ID IDM IAS EAS 60 ±20 70 10 280 20 60 Total Power Dissipation T...