TSM070NB04LCR

TSM070NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 75A, 7mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification PDFN56 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 40 7 9.5 20 V mΩ nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TC = 25°C TA = 25°C VDS VGS ID 40 ±20 75 15 Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy ...