N-Channel Power MOSFET
TSM70N600ACL
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6Ω
FEATURES
● Super-Junction technology ● High pe...
Description
TSM70N600ACL
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6Ω
FEATURES
● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
700 0.6 12.6
V Ω nC
APPLICATIONS
● Power Supply ● AC/DC LED Lighting
TO-262S (I2PAK SL)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM PD EAS IAS TJ, TSTG
700 ±30
8 4.6 24 83 100 2 - 55 to +150
UNIT ...
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