TSM70N600ACL

TSM70N600ACL Taiwan Semiconductor N-Channel Power MOSFET 700V, 8A, 0.6Ω FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 700 0.6 12.6 V Ω nC APPLICATIONS ● Power Supply ● AC/DC LED Lighting TO-262S (I2PAK SL) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PD EAS IAS TJ, TSTG 700 ±30 8 4.6 24 83 100 2 - 55 to +150 UNIT ...