TSM033NA04LCR

TSM033NA04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 141A, 3.3mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.5V Qg 40 3.3 4.4 23 V mΩ nC APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ±20 Continuous Drain Current (Note 1) Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C ID IDM IAS EAS 141 20 564 44 290 Tota...