TSM13ND50CI

TSM13ND50CI Taiwan Semiconductor N-Channel Power MOSFET 500V, 13A, 0.48Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VDS RDS(on) (max) Qg VALUE 500 0.48 39 UNIT V Ω nC APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG 500 ±30 13 8 52 57 608 7.8 - 55 to +150 UNIT V V A A W mJ A °C THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resist...