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50N03

GFO

MOSFET

DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . I...


GFO

50N03

File Download Download 50N03 Datasheet


Description
DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 50N03 TO-252-2L OGFD www.goford.cn TEL:0755-86350980 FAX:0755-86350963 50N03 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Symbol Parameter 50N03 Units VDS ID IDM PD VGS EAS TJ and TSTG Drain-to-Source Voltage Continuous Drain Current Drain Curre...




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