P Channel Enchancement Mode MOSFET
The 2305 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
1.Gate 2.Source 3.Drain
S: Subcontractor Y: Year Code A: Process Code
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.