2305

P Channel Enchancement Mode MOSFET 2305 -3.5A DESCRIPTION The 2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 12 1.Gate 2.Source 3.Drain 3 S05YA 12 S: Subcontractor Y: Year Code A: Process Code SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD. Page 1 www.szcyt.com P Channel Enchancement Mode MOSFET 2305 -3.5A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) TA=25 TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduc...