FTU04N60B

600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 14.7nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant/Lead Free  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power FTU04N60B/FTD04N60B BVDSS 600V RDS(ON) (Max.) 2.8Ω ID 3.6A Ordering Information Part Number Package Marking FTU04N60B TO-251（I-PAK） 04N60B FTU04N60BG TO-251（I-PAK） 04N60BG FTD04N60B TO-252（D-PAK） 04N60B FTD04N60BG TO-252（D-PAK） 04N60BG Remark RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol Parameter VDSS Drain-to-Source Voltage[1] ID ID@100℃ IDM PD Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ VGS Gate-to-Source Voltage EAS dv/dt Single Pulse Avalanche Energy L=24mH, ID=3.4A Peak Diode Recovery dv/dt[3] TL Soldering Temperature Distance of 1.6mm from cas...