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FTD04N65C Dataheets PDF



Part Number FTD04N65C
Manufacturers ark
Logo ark
Description 650V N-Channel MOSFET
Datasheet FTD04N65C DatasheetFTD04N65C Datasheet (PDF)

FTU04N65C/FTD04N65C Doc. NO: QRD-310 650V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge  Fast Switching  100% Avalanche Tested  RoHS Compliant/Lead Free  Halogen-free available BVDSS 650V RDS(ON) (Max.) 2.6Ω Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power GDS To-252 GDS To-251 G Ordering Information Part Number Package Marking FTU04N65C TO-251(I-PAK) 04N65C FTU04N65CG TO-251(I-PAK) 04N65CG FTD04N65C TO-252(D-PAK) 04.

  FTD04N65C   FTD04N65C


Document
FTU04N65C/FTD04N65C Doc. NO: QRD-310 650V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge  Fast Switching  100% Avalanche Tested  RoHS Compliant/Lead Free  Halogen-free available BVDSS 650V RDS(ON) (Max.) 2.6Ω Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power GDS To-252 GDS To-251 G Ordering Information Part Number Package Marking FTU04N65C TO-251(I-PAK) 04N65C FTU04N65CG TO-251(I-PAK) 04N65CG FTD04N65C TO-252(D-PAK) 04N65C FTD04N65CG TO-252(D-PAK) 04N65CG Remark RoHS Halogen-free RoHS Halogen-free ID 4.0A D S Absolute Maximum Ratings Symbol VDSS ID PD Parameter Drain-to-Source Voltage[1] Continuous Drain Current Power Dissipation Derating Factor above 25℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=10mH, ID=4A Peak Diode Recovery dv/dt[3] TL Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Sto.


FTU04N65C FTD04N65C DMZ1511E


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