MRF466

HG Semiconductors MRF466HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. FEATURES: PG = 15 dB min. at 40 W/30 MHz IMD3 = -30 dBc max. at 40 W (PEP) Omnigold™ Metalization System MAXIMUM RATINGS IC 6.0 A VCBO 65 V VCEO 35 V PDISS 175 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A EC Ø.125 NOM. FULL R J .125 BE C D FE GH I DIM MINIMUM inches / mm A .220 / 5.59 B .785 / 19.94 C .720 / 18.29 D .970 / 24.64 E F .004 / 0.10 G .085 / 2.16 H .160 / 4.06 I J .240 / 6.10 MAXIMUM inches / mm .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCEO IC = 100 mA BVCES IC = 100 mA BVEBO IE = 1.0 mA ICES VE = 28 V hFE VCE = 5.0 V IC = 0.5 A Cob VCB = 28 ...