MRF448

HG Semiconductors MRF448HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. ω Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% ω Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max) ω 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 255C (1) Derate above 255C Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 255C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO Collector...