Serial EEPROM. RM24C512C-L Datasheet

RM24C512C-L EEPROM. Datasheet pdf. Equivalent

Part RM24C512C-L
Description 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM
Feature RM24C512C-L 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus  Features Preliminary Datas.
Manufacture Adesto
Download RM24C512C-L Datasheet

512-Kbit 1.65V Minimum
Non-volatile Serial EEPROM
I2C Bus
Preliminary Datasheet
Memory array: 512Kbit non-volatile serial EEPROM memory
Single supply voltage: 1.65V - 3.6V
2-wire I2C interface
Compatible with I2C bus modes:
Page size: 128 bytes
-Byte and Page Write from 1 to 128 bytes
Low Energy Byte Write
-Byte Write consuming 50 nJ
Low power consumption
-0.25 mA active Read current
-1.0 mA active Write current
-1.0 µA Standby current
Fast Write
-Page Write in 3 ms (128 byte page)
-Byte Write within 60 µs
Random and sequential Read modes
Industry’s lowest read cycle latency
Unlimited read cycles
Write protect of the whole memory array
8-lead SOIC, 8-lead TSSOP, 8-pad UDFN and 6-ball WLCSP packages
RoHS-compliant and halogen-free packaging
Data Retention: >40 years at 125°C
Endurance: 100,000 Write Cycles (for both byte and page write cycles)
- No degradation across temperature range
Industrial Operating Temperature: -40C to 85C
No data loss under UV exposure on bare die or WLCSP
Based on Adesto's proprietary CBRAM® technology
The MavriqRM24C512C-L is a 512Kbit, serial EEPROM device that utilizes
Adesto's CBRAM® resistive memory technology. The memory devices use a single
low-voltage supply ranging from 1.65V to 3.6V.
The Mavriq I2C device is accessed through a 2-wire I2C compatible interface
consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL)
frequency is 1MHz. The devices have both byte write and page write capability. Page

write is 128 bytes. The Byte Write operation of Mavriq memory consumes only 10% of the energy consumed by a Byte
Write operation of EEPROM devices of similar size.
Adesto's EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte
write mode at 85°C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole
page for every write operation) CBRAM write endurance is based on the capability to write each byte individually,
irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology,
CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to
modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less
endurance for floating gate devices used in byte write mode when compared to page write mode.
The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM
devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in
one operation. External address pins permit up to eight devices on the same data bus. The devices are available in
standard 8-pin SOIC and TSSOP, UDFN and WLCSP packages.

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