MODE MOSFET. DMC2053UVT Datasheet

DMC2053UVT MOSFET. Datasheet pdf. Equivalent

Part DMC2053UVT
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Feature DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device N-Channel P-Channel .
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Datasheet
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DMC2053UVT
DMC2053UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
N-Channel
P-Channel
BVDSS
20V
-20V
RDS(ON)
35mΩ @ VGS = 4.5V
43mΩ @ VGS = 2.5V
74mΩ @ VGS = -4.5V
110mΩ @ VGS = -2.5V
ID
TA = +25°C
4.6A
4.2A
-3.2A
-2.7A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
Top View
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
Top View
D1 D2
G1
S1
Q1 N-Channel MOSFET
G2
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMC2053UVT-7
TSOT26
3000 / Tape & Reel
DMC2053UVT-13
TSOT26
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AR2 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
2018
F
Feb Mar
23
DMC2053UVT
Document number: DS40560 Rev. 2 - 2
2019
G
Apr
4
2020
H
May Jun
56
2021
I
Jul
7
Aug
8
2022
J
Sep
9
1 of 10
www.diodes.com
2023
K
2024
L
Oct Nov Dec
OND
July 2018
© Diodes Incorporated



DMC2053UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMC2053UVT
Q1 Value
20
±12
4.6
3.7
1.4
22
Q2 Value
-20
±12
-3.2
-2.6
-1.3
-20
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.7
173
1.1
108
37
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
20
0.4
Typ
0.7
369
54
32
4.1
3.6
0.4
1.0
2.6
3.0
12.5
3.6
6.0
0.9
Max
1.0
±100
1.0
35
43
56
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
V
µA
nA
V
mΩ
V
pF
Ω
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 2.0A
VGS = 0V, IS = 1A
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V, ID = 6A
VDS = 10V, VGS = 5V,
RG = 6, ID = 6A
IF = 1A, di/dt = 100A/μs
DMC2053UVT
Document number: DS40560 Rev. 2 - 2
2 of 10
www.diodes.com
July 2018
© Diodes Incorporated





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