IGBT. IGF40T120F Datasheet

IGF40T120F IGBT. Datasheet pdf. Equivalent

Part IGF40T120F
Description IGBT
Feature IGF40T120F General Description: Using advanced IGBT technology, the IGBT offers superior conduction.
Manufacture IPS
Datasheet
Download IGF40T120F Datasheet



IGF40T120F
IGF40T120F
General Description
Using advanced IGBT technology, the IGBT offers
superior conduction and switching performances,high
avalanche ruggedness.
Features:
Low saturation voltage and Quick switching
saturation voltage is positive temperature relation
and is easy to be used in parallel
High reliability
Built-in quick recovery diode.
Applications:
UPS
Inverter welding machine
Lead Free Package and Finish
VCES
1200V
VCE(sat)
1.9V
IC
40A
Ordering Information
Part Number
Package
Brand
IGF40T120F
TO-247
IPS
Absolute Maximum RatingsTJ= 25℃,unless otherwise specified
Symbol
Parameter
Rating
VCES Collector-Emitter Voltage
1200
VGES Gate- Emitter Voltage
±20
IC
ICMa1
Collector Current
Collector Current
Pulsed Collector Current
@TC=25
@TC=100
@TC=25
80
40
160
Diode Continuous Forward Current@TC=25
IF Diode Continuous Forward Current@TC=100
40
20
IFM Diode Maximum Forward Current
60
PD Power Dissipation
@TC=25
278
TJ Operating Junction
150
Tstg Storage Temperature Range
-55150
TL Maximum Temperature for Soldering
270
a1Repetitive rating; pulse width limited by maximum junction temperature
Units
V
V
A
A
A
A
A
W
©2018 InPower Semiconductor Co., Ltd.
Page 1 of 8
IGF40T120F RevA. Mar. 2018



IGF40T120F
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
IGF40T120F
Typ. Max.
-- 0.45
-- 0.8
-- 40
Units
/W
/W
/W
Electrical Characteristics of the IGBT (TJ= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ. Max.
Units
OFF Characteristics
VCES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 1200 --
--
V
ICES Collector-Emitter Leakage Current
VGE=0V,VCE=1200V
--
-- 1.0 mA
IGES(F) Gate to Emitter Forward Leakage
VGE=+20V
-- -- +250 nA
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250 nA
ON Characteristics
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
IC=40A ,VGE=15V
-- 1.9 2.4
IC=250uA ,VCE=VGE 4.5 5.8
7
V
V
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
VCE=25V,VGE=0V
f=1MHz
-- 3823 --
-- 170 --
-- 94 --
pF
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate-to-emitter Charge
Qgc Gate-to-Collector (Miller) Charge
VCE=600V,IC=40A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=25℃,
VCE=600V,IC=40A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=150℃,
VCE=600V,IC=40A
VGE=15V,
-- 62 --
-- 54 --
-- 265 --
-- 30 --
-- 3.3 --
-- 1.4 --
-- 4.7 --
-- 55 --
-- 55 --
-- 306 --
-- 38 --
-- 3.49 --
-- 1.85 --
-- 5.34 --
-- 239 --
-- 30 --
-- 147 --
ns
mJ
ns
mJ
nC
©2018 InPower Semiconductor Co., Ltd.
Page 2 of 8
IGF40T120F RevA. Mar. 2018





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