IGBT. IGP15N60F Datasheet

IGP15N60F IGBT. Datasheet pdf. Equivalent

Part IGP15N60F
Description IGBT
Feature IGP15N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior condu.
Manufacture IPS
Datasheet
Download IGP15N60F Datasheet



IGP15N60F
IGP15N60F
General Description
Using advanced IGBT technology, the 600V IGBT.
Offers superior conduction and switching performances.
Lead Free Package and Finish
VCES
600V
VCE(sat)
2.0V
IC
15A
Features:
Low saturation voltage: VCE(sat),typ=2.0V @IC=15A, and TC = 25°C;
RoHS Compliant;
Applications:
Inverter welder
Solar inverters
UPS
High switching frequency inverter
Ordering Information
Part Number
Package
IGP15N60F
TO-220
Brand
IPS
Absolute Maximum RatingsTa= 25℃,unless otherwise specified
Symbol
Parameter
Rating
Units
VCES Collector-Emitter Voltage
600
VGES Gate- Emitter Voltage
±20
IC
ICMa1
IF
Collector Current
Collector Current
@TC=100
Pulsed Collector Current @TC=25
Diode Continuous Forward Current@TC=100
30
15
45
10
IFM Diode Maximum Forward Current
Power Dissipation
@TC=25
30
100
PD Power Dissipation
Power Dissipation
@TC=100
@TA=25
40
2.0
TJ Operating Junction
Tstg Storage Temperature Range
150
-55150
TL Maximum Temperature for Soldering
270
a1Repetitive rating; pulse width limited by maximum junction temperature
V
V
A
A
A
A
W
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 6
IGP15N60F REV. A. Jan. 2017



IGP15N60F
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
IGP15N60F
Typ. Max.
-- 1.25
-- 2.50
-- 62.5
Units
/W
/W
/W
Electrical Characteristics of the IGBT (Ta= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ.
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICES Collector-Emitter Leakage Current
IGES(F) Gate to Emitter Forward Leakage
IGES(R) Gate to Source Reverse Leakage
ON Characteristics
VGE=0V,ICE=250u
A
VGE=0V,VCE=600
V
VGE=+20V
VGE =-20V
600
--
--
--
--
--
--
--
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
IC=15A ,VGE=15V
IC=1mA ,VCE=VGE
--
5.0
2.0
6.0
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
-- 675
VCE=30V,VGE=0V
f=1MHz
--
80
-- 18.5
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Electrical Characteristics of the Diode
VCE=400V,IC=15A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=25℃,
VCE=400V,IC=15A
VGE=15V,
--
--
--
--
--
--
--
--
--
--
25.8
19.0
57.6
32
0.761
0.081
0.842
33
7.8
16
VF Diode Forward Voltage
IF=10A
Trr Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
IF=10A
di/dt=100A/uS
Qrr Reverse Recovery Charge
-- 1.3
-- 88
-- 3.0
-- 132
Max.
--
1.0
+250
-250
2.6
7.0
--
--
--
--
--
--
--
--
--
--
--
--
--
2.1
--
--
--
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
V
ns
A
nC
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 6
IGP15N60F REV. A. Jan. 2017





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