SPP2323

SPP2323 Dual P-Channel Enhancement Mode MOSFET MOSFETMOSFET N DESCRIPTION Channel EnhanceAmPPeLICnAtTIOMNSode MOSFET The SPP2323 is the Dual P-Channel logic Power Management in Note book enhancement mode power field effect transistors are Portable Equipment Battery Powered System produced using high cell density, DMOS trench DC/DC Converter technology. This high density process is especially Load Switch tailored to minimize on-state resistance. These devices DSC are particularly suited for low voltage applications LCD Display inverter notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES  -20V/-3.3A,RDS(ON)=65mΩ@VGS=-4.5V -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TDFN2x2-6L package design PIN CONFIGURATION( TDFN2x2-6L) PART MARKING 2020/05/18 Ver 3 Page 1 SPP2323 Dual P-Channel Enhancement Mode MOSFET SPC6606 PIN DESCRIPTION NPin& P Pair EnhaSnymcboel ment ModeDMescOriptSionFET 1 S1 Source 1 2 G1 Gate 1 3 D2 Drain 2 4 S2 Source 2 5 G2 Gate 2 6 D1 Drain1 Exposed Backside Metal D1/D2 Drain ORDERING INFORMATION Part Number Package SPP2323TDN6RGB TDFN2x2-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2323TDN6RGB : Tape Reel ; Pb – Free ; Ha...