Mode MOSFET. SPP8835 Datasheet

SPP8835 MOSFET. Datasheet pdf. Equivalent

Part SPP8835
Description P-Channel Enhancement Mode MOSFET
Feature SPP8835 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8835 is the P-Channel logic enhancemen.
Manufacture SYNC POWER
Datasheet
Download SPP8835 Datasheet



SPP8835
SPP8835
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP8835 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPP8835 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
FEATURES
-30V/-30A, RDS(ON)=3.3mΩ@VGS=-10V
-30V/-20A, RDS(ON)=5mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
PPAK5X6 package design
PIN CONFIGURATION
PPAK5X6
PART MARKING
2017/03/06 Ver 1
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SPP8835
SPP8835
P-Channel Enhancement Mode MOSFET
PPAK5X6 PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
Package
SPP8835DN8RGB
PPAK5X6
SPP8835DN8RGB : Tape Reel ; Pb Free ; Halogen - Free
Part Marking
SPP8835
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current
TA=25℃
TA=100
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
TC=25℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient (t10s)
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
PD
TJ
TSTG
RθJA
Typical
-30
±20
-100
-82
-400
-80
320
83
150
-55/150
55
Unit
V
V
A
A
A
mJ
W
℃/W
2017/03/06 Ver 1
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