N-Channel Enhancement Mode MOSFET
The SPN8668 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management and
other battery powered circuits where high efficiency and
fast switching is required.
Super high density cell design for extremely low
Exceptional on-resistance and maximum DC current
PPAK3x3-8L package design
2018/3/22 Ver 1