SPN8668

SPN8668 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8668 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/80A,RDS(ON)=21mΩ@VGS=10V  60V/80A,RDS(ON)=24mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design APPLICATIONS  Motor Drive  Power Tools  LED Lighting PIN CONFIGURATION(PPAK3x3-8L) PART MARKING 2020/05/28 Ver 2 Page 1 SPN8668 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN8668DN8RGB PPAK3x3-8L ※ SPN8668DN8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN8668 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal...