SPC4606

SPC4606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES  N-Channel 30V/4.0A,RDS(ON)=40mΩ@VGS=10V 30V/3.6A,RDS(ON)=50mΩ@VGS=4.5V  P-Channel -30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V -30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x2–8L package design PIN CONFIGURATION(PPAK3x2–8L) PART MARKING 2020/05/20 Ver 2 Page 1 SPC4606 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPC4606DN8RGB PPAK3x2–8L ※ SPC4606DN8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free Part Marking 4606 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) ...