Bridge Rectifiers. TB2S Datasheet

TB2S Rectifiers. Datasheet pdf. Equivalent

Part TB2S
Description 1.0 Amp Silicon Bridge Rectifiers
Feature Elektronische Bauelemente TB2S ~ TB10S Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers RoHS.
Manufacture SeCoS
Datasheet
Download TB2S Datasheet



TB2S
Elektronische Bauelemente
TB2S ~ TB10S
Voltage 200V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Glass passivated chip junction
High surge overload rating30A peak
Save space on printed circuit boards
High temperature soldering guaranteed
260°C / 10 seconds at 5 lbs. (2.3 kg) tension
TBS
-+
A
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Dimensions in inches and (millimeters)
Mounting position: Any
PACKAGE INFORMATION
Package
MPQ
TBS 4K
Leader Size
13 inch
B
F
C
E
D
H
I
REF.
A
B
C
D
E
Millimeter
Min.
4.25
4.85
1.15
Max.
4.55
5.15
1.45
0.60 0.70
3.90 4.10
REF.
F
G
H
I
Millimeter
Min.
6.30
0.05
4.25
Max.
6.70
0.15
4.55
0.50 0.70
G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.)
Parameter
Symbol
TB2S
Part Number
TB4S TB6S TB8S
TB10S
Maximum Recurrent Reverse Voltage
VRRM
200 400 600 800 1000
Maximum RMS Voltage
VRMS
140 280 420 560 700
Maximum DC Blocking Voltage
Maximum Instantaneous Forward Voltage @
IFM=0.4A
Maximum Average Forward Rectified Current
@ TL=100°C
VDC
VF
IF(AV)
200 400 600 800 1000
0.95
0.8 1
1.0 2
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
On aluminum
Typical thermal resistance substrate
junction to ambient
On glass-epoxy
substrate
IFSM
RθJA
30
62.5
80
Typical thermal resistance junction to lead
Maximum DC Reverse Current at Rated DC
Blocking Voltage@ TA=25°C
Operating & Storage Temperature Range
Notes:
1. On glass epoxy P.C.B.
2. On aluminum substrate.
RθJL
IR
TJ,TSTG
25
10
-55~150
Unit
V
V
V
V
A
A
°C / W
 A
°C
http://www.SeCoSGmbH.com/
14-Feb-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2



TB2S
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
TB2S ~ TB10S
Voltage 200V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
http://www.SeCoSGmbH.com/
14-Feb-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2





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