PMV20EN

PMV20EN 30 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1200 mW 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 6 A; Tj = 25 °C Min Typ Max - - 30 -20 - 20 [1] - - 7.6 - 17 21 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 c...