SILICON TRIACS. TIC226D Datasheet

TIC226D TRIACS. Datasheet pdf. Equivalent

Part TIC226D
Description SILICON TRIACS
Feature TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IG.
Manufacture BOURNS
Datasheet
Download TIC226D Datasheet



TIC226D
TIC226 SERIES
SILICON TRIACS
8 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1 - 3)
This series is currently available,
but not recommended for new
designs.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC226D
Repetitive peak off-state voltage (see Note 1)
TIC226M
TIC226S
TIC226N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width 200 μs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
8
70
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
IDRM
IGT
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
VGT
Gate trigger
voltage
VT On-state voltage
VD = rated VDRM
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
IT = ±12 A
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
IG = 0
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
IG = 50 mA
TC = 110°C
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
(see Note 5)
MIN TYP MAX UNIT
±2
6 50
-12 -50
-10 -50
25
0.7 2
-0.8 -2
-0.8 -2
0.9 2
±1.5 ±2.1
mA
mA
V
V
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1



TIC226D
TIC226 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IH
IL
dv/dt
dv/dt(c)
Holding current
Latching current
Critical rate of rise of
off-state voltage
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
VDRM = Rated VDRM
Critical rise of commu-
tation voltage
VDRM = Rated VDRM
IG = 0
IG = 0
(see Note 6)
IG = 0
ITRM = ±12 A
Init’ ITM = 100 mA
Init’ ITM = -100 mA
TC = 110°C
TC = 85°C
(see figure 7)
10
-6
±100
30
-30
50
-50
mA
mA
V/µs
±5 V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 , tp(g) = 20 µs, tr = 15 ns, f = 1 kHz.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.8 °C/W
62.5 °C/W
1000
100
10
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC01AA
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC01AB
10
Vsupply IGTM
}+ +
+-
--
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
-+
1
1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.





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