POWER MOSFET. MCIRF7N65 Datasheet

MCIRF7N65 MOSFET. Datasheet pdf. Equivalent

Part MCIRF7N65
Description POWER MOSFET
Feature MFIRF7N65 MCIRF7N65 ID = 7.0A VDS = 650V RDS(on)MAX = 1.5Ω Major Ratings and Characteristics Char.
Manufacture Global Semiconductor
Datasheet
Download MCIRF7N65 Datasheet



MCIRF7N65
MFIRF7N65
MCIRF7N65
ID = 7.0A
VDS = 650V
RDS(on)MAX = 1.
Major Ratings and Characteristics
Characteristics
Values
Units
ID 7.0 A
IDM 28.0 A
VDS 650 V
VGS
TJ
T storage
±30
150
-55 ~150
V
POWER MOSFET
Description/ Features
The MCIRF7N65 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
150Tj operation
Low Power Loss & Low cost
Fast Switching
RoHS Compliant
Case Styles
Ordering Information
Part Number
MCIRF7N65
MFIRF7N65
1GATE
2DRAIN
3SOURCE
Package
TO-220
TO-220F
1GATE
2DRAIN
3SOURCE
Packaging
Tube
Tube
1 of 7



MCIRF7N65
MFIRF7N65
MCIRF7N65
Absolute Maximum Rating (Ta = 25)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Pulsed
Symbol
VDS
VGS
IDM
Total Dissipation
PD
Junction Temperature
Storage Temperature
TJ
Tstg.
Single Pulse Avalanche Energy
Electrical Characteristics(Tamb=25)
EAS
Value
650
±30
28
TO-220
125
TO-220F
45
150
-55~150
TO-220
500
TO-220F
500
Unit
V
V
A
W
mj
Characteristic
Symbol
Test Condition
MIN. MAX. Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
650
V
Gate Threshold Voltage
Drain-Source Leakage Current
Drain-Source Diode Forward Voltage
Forward Trans conductance
Gate-Body Leakage Current(Vds=0V)
Static Drain-Source On Resistance
VGS(TH)
IDSS
VSD
Gfs
IGSS
RDS(ON)
Thermal Resistance Junction-Case
RthJ-C
Dynamic Characteristics(Tamb=25)
VGS=VDS,ID=250uA
VDS=650V, VGS=0V
VGS=0V,IS=7A
VDS=10V, ID=3.5A
VGS=±30V
VGS=10V,IS=3.5A
TO-220
TO-220F
2 4V
1 uA
1.5 V
4S
±100 nA
1.5 Ω
2.2
/W
2.78
Characteristic
Symbol Test Condition
MIN. TYP. MAX. Unit
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,
F=1.0MHz
-
-
-
1100 1430 pF
135 175 pF
16 21 pF
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Rev. 1.0





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