POWER MOSFET. MJIRF2N65 Datasheet

MJIRF2N65 MOSFET. Datasheet pdf. Equivalent

Part MJIRF2N65
Description POWER MOSFET
Feature MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω Major Ratings and C.
Manufacture Global Semiconductor
Datasheet
Download MJIRF2N65 Datasheet



MJIRF2N65
MCIRF2N65 MFIRF2N65
MKIRF2N65 MJIRF2N65
ID = 2.0A
VDS = 650V
RDS(on)MAX = 5.0Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 2.0 A
IDM 8.0 A
VDS 650 V
VGS
TJ
T storage
±30
150
-55 ~150
V
POWER MOSFET
Description/ Features
The MCIRF2N65 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
150Tj operation
Low Power Loss & Low cost
Fast Switching
RoHS Compliant
Case Styles
TO-220
TO-220F
TO-252
TO-251
Ordering Information
Part Number
MCIRF2N65
MFIRF2N65
MJIRF2N65
MKIRF2N65
1GATE
2DRAIN
3SOURCE
Package
TO-220
TO-220F
TO-251
TO-252
Packaging
Tube
Tube
Tube
Tube & Tape & Reel
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MJIRF2N65
MCIRF2N65 MFIRF2N65
MKIRF2N65 MJIRF2N65
Absolute Maximum Rating (Tamb = 25)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Pulsed
IDM
Total Dissipation
PD
Junction Temperature
Storage Temperature
Single Pulse Avalanche Energy
Electrical Characteristics(Tamb=25)
TJ
Tstg.
EAS
Value
650
±30
8
TO-220
54
TO-220F
20
TO-251
44
TO-252
44
150
-55~150
130
Unit
V
V
A
W
mJ
Characteristic
Symbol
Test Condition
MIN. MAX. Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
650
Gate Threshold Voltage
VGS(TH) VGS=VDS,ID=250uA
2
4
Drain-Source Leakage Current
IDSS VDS=600V, VGS=0V
-
10
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IS=2A
- 1.4
Forward Trans conductance
Gfs VDS=10V, ID=1.0A 0.8
Gate-Body Leakage Current(Vds=0V)
IGSS
VGS=±30V
- ±100
Static Drain-Source On Resistance
RDS(ON)
Thermal Resistance Junction-Case
RthJ-C
Dynamic Characteristics(Tamb=25)
VGS=10V,IS=1.0A
TO-220
TO-220F
TO-251
TO-252
- 5.0
-2
- 2.5
- 2.32
- 2.32
Characteristic
Symbol Test Condition
MIN.
TYP. MAX.
V
V
uA
V
S
nA
Ω
/W
Unit
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,
F=1.0MHz
-
-
-
270 350 pF
45 55 pF
4.5 7.0 pF
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Rev. 1.0





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