POWER MOSFET. MFIRF10N65 Datasheet

MFIRF10N65 MOSFET. Datasheet pdf. Equivalent

Part MFIRF10N65
Description POWER MOSFET
Feature MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Cha.
Manufacture Global Semiconductor
Datasheet
Download MFIRF10N65 Datasheet



MFIRF10N65
MFIRF10N65
MCIRF10N65
ID = 10A
VDS = 650V
RDS(on)MAX = 0.8Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 10 A
IDM 40 A
VDS 650 V
VGS
TJ
T storage
±30
150
-55 ~150
V
POWER MOSFET
Description/ Features
The MFIRF10N65 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
150Tj operation
Low Power Loss & Low cost
Fast Switching
RoHS Compliant
Case Styles
Ordering Information
Part Number
MCIRF10N65
MFIRF10N65
1GATE
2DRAIN
3SOURCE
Package
TO-220
TO-220F
1GATE
2DRAIN
3SOURCE
Packaging
Tube
Tube
1 of 7



MFIRF10N65
MFIRF10N65
MCIRF10N65
Absolute Maximum Rating (Tamb=25)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Pulsed
Symbol
VDS
VGS
IDM
Total Dissipation
PD
Junction Temperature
Storage Temperature
TJ
Tstg.
Single Pulse Avalanche Energy
EAS
Value
650
±30
40
TO-220
TO-220F
150
156
50
-55~150
TO-220
TO-220F
600
600
Unit
V
V
A
W
mJ
Electrical Characteristics(Tamb=25)
Characteristic
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(TH)
Drain-Source Leakage Current
IDSS
Test Condition
VGS=0V,ID=250uA
VGS=VDS,ID=250uA
VDS=650V, VGS=0V
MIN. MAX. Unit
650 - V
2 4V
- 10 uA
Drain-Source Diode Forward Voltage
VSD
VGS=0V,ID=10A
- 1.5 V
Forward Trans conductance
Gfs VDS=10V, ID=5.0A 5
Gate-Body Leakage Current(Vds=0V)
IGSS
VGS=±30V
-
Static Drain-Source On Resistance
RDS(ON)
Thermal Resistance Junction-Case
RthJ-C
Dynamic Characteristics(Tamb=25)
VGS=10V,ID=5.0A
TO-220
TO-220F
-
-
-
Characteristic
Symbol
Test Condition
MIN. TYP.
-
±100
0.95
2
2.5
S
nA
Ω
/W
MAX. Unit
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
CISS
-
1210
1580
pF
COSS
CRSS
VDS=25V,VGS=0V,
F=1.0MHz
-
-
145 190 pF
16 20 pF
2 of 7
Rev. 1.0





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