Power MOSFET. MTEE2N20FP Datasheet

MTEE2N20FP MOSFET. Datasheet pdf. Equivalent

Part MTEE2N20FP
Description N-Channel Enhancement Mode Power MOSFET
Feature CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Pag.
Manufacture Cystech Electonics
Datasheet
Download MTEE2N20FP Datasheet



MTEE2N20FP
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTEE2N20FP BVDSS
ID
200V
4A
RDS(ON)@VGS=10V, ID=2.9A 650 mΩ(typ)
RDS(ON)@VGS=7V, ID=1A 590 mΩ(typ)
Description
The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Symbol
MTEE2N20FP
Outline
TO-220FP
GGate
DDrain
SSource
MTEE2N20FP
GDS
CYStek Product Specification



MTEE2N20FP
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=10mH, ID=2Amps,
VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAR
EAS
EAR
PD
PDSM
TL
Limits
200
±30
4*
2.8*
1.2
0.9
9*
2
20
2.5
25
12
2
1.3
300
TPKG
260
Tj, Tstg -55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
6
62.5
Unit
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTEE2N20FP
CYStek Product Specification





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