Mode MOSFET. MTN003N03S3 Datasheet

MTN003N03S3 MOSFET. Datasheet pdf. Equivalent

Part MTN003N03S3
Description 30V N-CHANNEL Enhancement Mode MOSFET
Feature CYStech Electronics Corp. Spec. No. : C567S3 Issued Date : 2012.07.24 Revised Date : 2013.09.09 Pag.
Manufacture CYStech
Datasheet
Download MTN003N03S3 Datasheet



MTN003N03S3
CYStech Electronics Corp.
Spec. No. : C567S3
Issued Date : 2012.07.24
Revised Date : 2013.09.09
Page No. : 1/9
30V N-CHANNEL Enhancement Mode MOSFET
MTN003N03S3 BVDSS
ID
RDSON@VGS=4.5V, ID=300mA
RDSON@VGS=4V, ID=300mA
RDSON@VGS=2.5V, ID=300mA
Features
Simple drive requirement
Small package outline
Pb-free package
30V
530mA
0.44Ω(typ)
0.48Ω(typ)
1Ω(typ)
Symbol
MTN003N03S3
Outline
SOT-323
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTN003N03S3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTN003N03S3
CYStek Product Specification



MTN003N03S3
CYStech Electronics Corp.
Spec. No. : C567S3
Issued Date : 2012.07.24
Revised Date : 2013.09.09
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25
Linear Derating Factor
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on minimum copper pad , t5 seconds.
4. Human body model, 1.5kΩ in series with 100pF.
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
30
±20
530
420
3
0.2
0.002
1000 (Note 4)
-55~+150
Unit
V
V
mA
mA
A
W
W/°C
V
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Note : Surface mounted on minimum copper pad , t5 seconds.
Symbol
Rth,ja
Limit
625
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
MTN003N03S3
Min. Typ. Max. Unit
Test Conditions
30 -
-
1 1.25 1.8
V VGS=0, ID=250μA
V VDS=VGS, ID=250μA
- - ±10
VGS=±20V, VDS=0
- - 1 μA VDS=30V, VGS=0
- - 10
VDS=24V, VGS=0 (Tj=70°C)
- 0.44 0.6
VGS=4.5V, ID=300mA
- 0.48 0.6 Ω VGS=4V, ID=300mA
1 1.5
VGS=2.5V, ID=300mA
- 670 - mS VDS=10V, ID=300mA
- 41 -
- 11 - pF VDS=10V, VGS=0, f=1MHz
-6-
-7-
-
-
15
18
-
-
ns
VDS=15V, ID=150mA, VGS=4V
RG=10Ω
- 22 -
CYStek Product Specification





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