HT9926

HT9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES  Super high dense cell design for low RDS(ON)。  Rugged and reliable.  SOP-8 package.  Pb Free. VDS (V) 20V Product Summary ID (A) 6A RDS(ON) (mΩ) Max 32 @VGS = 4.0V 43 @VGS = 2.5V SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 0C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulse db Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a Ver1.0 RθJA Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 ±10 6 35 1.7 2 -55 to 150 Unit V V A A A W 0C 62.5 0C/W 1 HT9926 ELECTRICAL CHARACTERISTICS (TA = 25 ℃ unless otherwise noted) Parameter Symbol Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance BVDSS IDSS IGSS V...