Document
P-Channel 40 V (D-S) 175 °C MOSFET
DTS4501
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
- 40 0.083 0.110 - 3.6 Single
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
S
G1 S2
3D
G
Top View DTS4501
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
SOT-23 DTS4501
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction) Pulsed Drain Currenta
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationa
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ.