Document
NVD5C486N
Power MOSFET
40 V, 17.9 mW, 22 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain Current RqJA (Notes 1, 2 & 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
Steady State
TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
40 "20
23 16 18.3 9.1 9.2
6.5
2.9 1.5 104 −55 to 175
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 15 A
Single Pulse Drain−to−Source Avalanche En.