Document
MITMSUITBSIUSBHISES>
PM100PRMS10D0R1S2D0120
FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE
PM100RSD120
FEATURE a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse
recovery characteristics. c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. • 3φ 100A, 1200V Current-sense IGBT for 15kHz switching • 50A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) • Acoustic noise-less 18.5/22kW class inverter application • UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION General purpose inverter, servo drives and ot.