MGF4841CL

< Power GaAs HEMT > MGF4841CL Micro-X type plastic package DESCRIPTION The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ.) @ f=24.3GHz APPLICATION K band low noise amplifiers Fig.1 Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=1.5V , VGS=0V MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 4,000pcs/reel RoHS COMPLIANT MGF4841CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID Parameter Gate to drain voltage Gate to source voltage Drain current PT Total power dissipation Tch Channel temperature Tstg Storage temperature (Ta=25C ) Ratings -4 -4 IDSS 130 125 -55 to +125...