RD100HHF1C

< Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30 FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 6.2±0.7 4.5±0.7 0.1+-00..0051 PIN 1. DRAIN 2. SOURCE 3. GATE UNIT:mm RoHS COMPLIANT RD100HHF1C-501 is a RoHS compliant products. . ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS VDSS VGSS Pch Pin ID Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current VGS=0V VDS=0V Tc=25°C ZG=ZL=50 - Tch Channel temperature - Tstg Storage temperature - Rth j-c Thermal resistance junction to case Note 1: Above parameters are guaranteed independently. RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A °C °C °C/W Publication Date : Jun．2019 1 < Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS LIMITS MIN TYP MAX. IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 10 IGSS Gate ...