SEMICONDUCTOR
RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM
December 1995
30A, 50V, Avalanche Rated, P-Channel Enhanceme...
SEMICONDUCTOR
RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM
December 1995
30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
Features
30A, 50V rDS(ON) = 0.065Ω Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve +175oC Operating Temperature
Description
The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG30P05
TO-247
RFG30P05
RFP30P05
TO-220AB
RFP30P05
RF1S30P05
TO-262AA
F1S30P05
RF1S30P05SM
TO-263AB
F1S30P05
NOTE: When ordering use...