Document
SPP3095
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications
APPLICATIONS Power Management in Desktop Computer DC/DC Converter LCD Display inverter
FEATURES -30V/-8A,RDS(ON)=100mΩ@VGS=-10V -30V/-6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-252-2L package design
PIN CONFIGURATION ( TO-252-2L )
PART MARKING
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SPP3095
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPP3095T252RGB
TO-252-2L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3095T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking SPP3095
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS ID
IDM IS
PD TJ TSTG RθJA
Typical -30
±20 -12 -8 -20
-2.3 2.8 1.8 -55/150 -55/150 105
Unit V V A
A A
W ℃ ℃ ℃/W
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SPP3095
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
IDSS
RDS(on) gfs
VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85℃ VGS=-10V,ID=-8A VGS=-4.5V,ID=-6A
VDS=-10V,ID=-8A
VSD IS=-2.5A,VGS=0V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=-15V,VGS=-10V ID=-8A
VDS=-15V,VGS=0V f=1MHz
VDD=-15V,RL=15Ω ID=-1.0A,VGEN=-10V RG=6Ω
Min. Typ Max. Unit
-30
V
-1.0
-3.0
±100 nA
-1 uA
-5
0.083 0.100 0.130 0.150
Ω
8
S
-0.8 -1.2 V
5.8
10
0.8
nC
1.5
226
87
pF
19
9
20
9
20
nS
18
35
6
20
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SPP3095
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3095
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3095
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP3095
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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