SPN10T10

SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN10T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/5A,RDS(ON)=160mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L,TO-220F-3L package design PIN CONFIGURATION TO-220-3L TO-220F-3L PART MARKIN 2020/05/14 Ver.2 Page 1 SPN10T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN10T10T220TGB TO-220-3L SPN10T10T220FTGB TO-220F-3L ※ SPN10T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN10T10T220FTGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN10T10 SPN10T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TC=25℃ TC=100℃ TC = 25℃ TC=100℃ Symbol VDSS VGSS I...